TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 250 V |
Current Rating | 28.0 A |
Case/Package | TO-220-3 |
Power Rating | 38 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 60 mΩ |
Polarity | N-Channel |
Power Dissipation | 117 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 250 V |
Breakdown Voltage (Drain to Source) | 250 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 51.0 A |
Rise Time | 465 ns |
Input Capacitance (Ciss) | 3410pF @25V(Vds) |
Input Power (Max) | 38 W |
Fall Time | 130 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Junction Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 38W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.36 mm |
Size-Width | 4.9 mm |
Size-Height | 16.07 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDPF51N25 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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