| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-3 |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 115 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 200 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tray |
The 2N3055H is a 60V Silicon Power Base Transistor for high power audio, series pass power supplies, disk-head positioners and other linear application. The transistor can also be used in power switching circuits such as converters or inverters.
● Higher safe operating area
● Low saturation voltages
● High power dissipation capability
Multicomp
4 Pages / 0.06 MByte
Multicomp
134 Pages / 0.15 MByte
ST Microelectronics
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3 Tray
Solid State
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60V, 800kHz, 115W, 15A, 70 hFE
Multicomp
The 2N3055 from Multicomp is a through hole, NPN transistors in TO-3 metal can package. The device is suitable for switching and amplification.
Motorola
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180W
NTE Electronics
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3
Semelab
Trans GP BJT NPN 60V 15A 3Pin(2+Tab) TO-3
Central Semiconductor
Trans GP BJT NPN 60V 15A 3Pin (2+Tab) TO-3
Taitron
Power Bipolar Transistor,
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