| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 360 mW |
| Breakdown Voltage (Collector to Emitter) | 60.0 V |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
The 2N3251A is a PNP silicon planer epitaxial Power Transistor in a JEDEC metal case. The device is suited for switching and amplifier applications.
● -55 to 150°C Operating junction temperature range
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