TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-205 |
Polarity | NPN |
Breakdown Voltage (Collector to Emitter) | 250 V |
Continuous Collector Current | 1A |
hFE Min | 40 @20mA, 10V |
Input Power (Max) | 800 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA
● packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
Microsemi
6 Pages / 0.27 MByte
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