| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 200 ℃ |
The 2N3501 is a silicon power NPN Bipolar Transistor intended for used in low power amplifier and switching applications.
● -65 to 200°C Operating junction temperature range
Multicomp
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