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2N3583
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2N3583 Datasheet PDF - Central Semiconductor

Manufacturer:Central Semiconductor
Category:BJTs
Case Package:TO-66-2
Description:Trans GP BJT NPN 175V 5A 3Pin(2+Tab) TO-66 Sleeve
Documentation:2N3583 Datasheet (4 Pages)
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2N3583 Datasheet PDF (4 Pages)
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2N3583 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-66-2
Power Dissipation35 W
Breakdown Voltage (Collector to Emitter)175 V
hFE Min40 @500mA, 10V
Input Power (Max)35 W
Operating Temperature (Max)200 ℃
Operating Temperature (Min)-65 ℃
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2N3583 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-65℃ ~ 200℃ (TJ)
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2N3583 Documents

2N3583 Datasheet
Central Semiconductor
4 Pages / 0.39 MByte
2N3583 Other Datasheet PDF
Central Semiconductor
3 Pages / 0.4 MByte
2N3583 Notice File
Central Semiconductor
3 Pages / 0.28 MByte
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