| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.30 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 115 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 467 pF |
| Gate Charge | 4.40 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 2.30 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 467pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDC6312P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
● ±8V Gate to source voltage
● -2.3A Continuous drain/output current
● 7A Pulsed drain/output current
Fairchild
2 Pages / 0.19 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
5 Pages / 0.08 MByte
Fairchild
5 Pages / 0.08 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6312P Dual MOSFET, Dual P Channel, 2.3A, -20V, 115mohm, -4.5V, -900mV
ON Semiconductor
MOSFET 2P-CH 20V 2.3A SSOT-6
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