2N3700 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	BJTs
Case Package:	TO-18
Description:	Trans GP BJT NPN 80V 1A 0.5W(1/2W) 3Pin TO-18 Bag
Documentation:	2N3700 Datasheet (7 Pages)Package Outline Dimension on4 Page 5 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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2N3700 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Frequency	100 MHz
Number of Pins	3 Pin
Voltage Rating (DC)	80.0 V
Current Rating	1.00 A
Case/Package	TO-18
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	500 mW
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	100 @150mA, 10V
hFE Max	300
Input Power (Max)	500 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW