| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Case/Package | TO-78-6 |
| Power Dissipation | 0.35 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 150 @1mA, 5V |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Jump-start your electronic circuit design with this versatile PNP 2N3810 GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
Microsemi
3 Pages / 0.11 MByte
Microsemi
2 Pages / 0.05 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
