| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 70.0 A |
| Case/Package | ISOTOP-4 |
| Power Rating | 600 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 45 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 7500pF @25V(Vds) |
| Input Power (Max) | 600 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.5 mm |
| Size-Height | 9.1 mm |
| Operating Temperature | 150℃ (TJ) |
The STE70NM50 is a MDmesh™ N-channel Zener-protected Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The proprietary strip technique yields overall dynamic performance that is significantly better. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
● 0.045R RDS (ON)
● High dV/dt and avalanche capabilities
● Improved ESD capability
● Low input capacitance and gate charge
● Low gate input resistance
● Tight process control
● Lowest ON-resistance
ST Microelectronics
8 Pages / 0.28 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
STMICROELECTRONICS STE70NM50 MOSFET Transistor, N Channel, 30A, 500V, 45mohm, 10V, 4V
ST Microelectronics
STMICROELECTRONICS STE70NM60 Power MOSFET, N Channel, 30A, 600V, 50mohm, 10V, 4V
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