TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -200 mA |
Case/Package | TO-92-3 |
Power Rating | 625 mW |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 250 MHz |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.2A |
hFE Min | 100 @10mA, 1V |
hFE Max | 300 |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 30 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N3906BU is a -40V PNP Bipolar (BJT) Single Transistor, designed for general purpose amplifier and switching applications at collector currents of 10µA to 100mA. This product is general usage and suitable for many different applications.
● -40V Collector to base voltage (VCBO)
● -5V Emitter to base voltage (VEBO)
● 83.3°C/W Thermal resistance, junction to case
● 200°C/W Thermal resistance, junction to ambient
● 75ns Fall time (TA = 25°C)
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