TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -600 mA |
Case/Package | TO-92-3 |
Breakdown Voltage | 40.0 V |
Polarity | Dual P-Channel |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 200 MHz |
Breakdown Voltage (Collector to Emitter) | 40 V |
Continuous Collector Current | 0.6A |
hFE Min | 100 @150mA, 2V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Cut Tape (CT) |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Pb-Free Packages are Available
ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
3 Pages / 0.18 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
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Trans GP BJT PNP 40V 0.6A 3Pin TO-92 Bulk
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Fairchild
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ST Microelectronics
PNP,Vceo=-40V,Ic=-600mA,hfe=20~300
先科ST
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