| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -600 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.6A |
| hFE Min | 100 @150mA, 2V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Pb-Free Packages are Available
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