| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 300 @100µA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ |
This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. It is housed in a TO-92 package for medium power applications.
●Features
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● |
● Pb-Free Packages are Available
ON Semiconductor
5 Pages / 0.08 MByte
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