| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-225-3 |
| Drain to Source Resistance (on) (Rds) | 25 mΩ |
| Polarity | Dual P-Channel |
| Power Dissipation | 40.0 W |
| Threshold Voltage | 1.5 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Collector to Emitter) | -80.0 V |
| Continuous Collector Current | 4A |
| hFE Min | 20 |
| hFE Max | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Material | Silicon |
| Minimum Packing Quantity | 500 |
4 AMPERE POWER TRANSISTORS PNP SILICON 60 − 80 VOLTS
●These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191,2N5192.
●Features
●•Pb−Free Packages are Available
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
2 Pages / 0.03 MByte
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