| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 2 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 20 @1.5A, 2V |
| hFE Max | 80 |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.
●It is inteded for use in medium power linear and switching applications.
●The complementary NPN type is 2N5192.
●■ STMicroelectronics PREFERRED SALESTYPE
●■ PNP TRANSISTOR
●APPLICATIONS
●■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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