| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 2 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 30.0 A |
| Case/Package | TO-204-2 |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Gain Bandwidth Product | 2 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| Continuous Collector Current | 30A |
| hFE Min | 15 @15A, 2V |
| hFE Max | 60 |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 2 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
The 2N5302G is a 30A NPN high-power Silicon Transistor suitable for use in power amplifier and switching circuits applications.
● Low collector-emitter saturation voltage (0.75VDC maximum VCE(sat) @ 10A DC IC)
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