TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 50 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 100 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Base) | 35.0 V |
Breakdown Voltage (Collector to Emitter) | 30 V |
Continuous Collector Current | 0.1A |
hFE Min | 300 @100µA, 5V |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 300 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N5088BU is a 30V NPN Bipolar (BJT) Single Transistor, designed for low noise, high gain and general purpose amplifier applications at collector currents from 1µA to 50mA. This product is general usage and suitable for many different applications.
● 35V Collector to base voltage (VCBO)
● 4.5V Emitter to base voltage (VEBO)
● 83.3°C/W Thermal resistance, junction to case
● 200°C/W Thermal resistance, junction to ambient
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