2N5401 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	BJTs
Case Package:	TO-226-3
Description:	Trans GP BJT PNP 150V 0.6A 3Pin TO-92
Documentation:	2N5401 Datasheet (5 Pages)Package Outline Dimension on5 Page Part Numbering System on1 Page 2 Page 5 Page 2N5401 Application Note (13 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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2N5401 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	-150 V
Current Rating	-600 mA
Case/Package	TO-226-3
Polarity	PNP
Power Dissipation	625 mW
Breakdown Voltage (Collector to Base)	160 V (min)
Breakdown Voltage (Collector to Emitter)	150 V
hFE Min	60 @10mA, 5V
Input Power (Max)	625 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW