| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -150 V |
| Current Rating | -600 mA |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.6A |
| hFE Min | 60 @10mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Box |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N5401G is a PNP silicon amplifier Bipolar Transistor, 150VDC collector-emitter voltage, 160VDC collector-base voltage and 600mADC collector current-continuous. Designed for medium power applications.
● 200°C/W Junction-to-ambient thermal resistance
● 83.3°C/W Junction-to-case thermal resistance
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