| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 15 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -200 V |
| Current Rating | -1.00 A |
| Case/Package | TO-39-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1 W |
| Gain Bandwidth Product | 15 MHz |
| Breakdown Voltage (Collector to Emitter) | 200 V |
| hFE Min | 30 @50mA, 10V |
| hFE Max | 150 |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 9.4 mm |
| Size-Width | 9.4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -65℃ ~ 200℃ |
Bipolar (BJT) Transistor PNP 200 V 1 A 15MHz 1 W Through Hole TO-39
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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