| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | 100 mA |
| Case/Package | TO-226-3 |
| Polarity | P-Channel |
| Power Dissipation | 350 mW |
| Input Capacitance | 7.00 pF |
| Drain to Source Voltage (Vds) | 40.0 V |
| Breakdown Voltage (Gate to Source) | 40.0 V |
| Reverse Breakdown Voltage | 40 V |
| Input Capacitance (Ciss) | 7pF @15V(Vds) |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 135 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Height | 5.33 mm |
| Operating Temperature | -65℃ ~ 135℃ (TJ) |
JFET Amplifier
●P−Channel − Depletion
●Features
●•Pb−Free Packages are Available
ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
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CASE 2904, STYLE 7 TO92 (TO226AA)
Central Semiconductor
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Vishay Semiconductor
VISHAY 2N5462 JFET Transistor, Junction Field Effect, 40V, -4mA, -16mA, 9V, TO-226AA, JFET
TI
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
Solitron Devices
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92,
InterFET
P-Channel silicon junction field-effect transistor
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