| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-204-2 |
| Polarity | Dual P-Channel |
| Power Dissipation | 160 W |
| Breakdown Voltage (Collector to Emitter) | -100 V |
| Continuous Collector Current | 20A |
| hFE Min | 750 |
| hFE Max | 18000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 160000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Minimum Packing Quantity | 100 |
The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.
●Features
●---
● |
● High DC Current Gain @ IC = 10 Adc
●hFE = 2400 (Typ) - 2N6284
●hFE = 4000 (Typ) - 2N6287
● Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
● Monolithic Construction with Built-In Base-Emitter Shunt Resistors
● Pb-Free Packages are Available
ON Semiconductor
8 Pages / 0.51 MByte
ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.03 MByte
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