TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 200 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 350 V |
Current Rating | 500 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 625 mW |
Breakdown Voltage (Collector to Emitter) | 350 V |
Continuous Collector Current | 0.5A |
hFE Min | 20 @50mA, 10V |
hFE Max | 200 |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 20 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape |
Material | Silicon |
Size-Length | 4.58 mm |
Size-Width | 3.86 mm |
Size-Height | 4.58 mm |
Operating Temperature | 150℃ (TJ) |
The 2N6517TA is a NPN Epitaxial Silicon Transistor offers 625mW maximum collector dissipation and 500mA collector current.
● High voltage transistor
● Complement to 2N6520
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