| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 350 V |
| Current Rating | 500 mA |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 200 MHz |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 20 @50mA, 10V |
| hFE Max | 200 |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | 150℃ (TJ) |
High Voltage Transistor
●• Collector-Emitter Voltage: VCEO=350V
●• Collector Dissipation: PC (max)=625mW
●• Complement to 2N6520
●• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
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