| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| hFE Min | 20 @50mA, 10V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Material | Silicon |
| Size-Length | 4.58 mm |
| Size-Width | 3.86 mm |
| Size-Height | 4.58 mm |
| Operating Temperature | 150℃ (TJ) |
The High Voltage PNP Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Voltage and Current are Negative for PNP Transistors
● Pb-Free Package is Available
ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
10 Pages / 0.18 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
Bipolar Transistors - BJT 500mA 350V NPN
Samsung
Trans GP BJT NPN 350V 0.5A 3Pin TO-92
Fairchild
NPN TR 350V/0.5A/625mW/200MHz
Central Semiconductor
Trans GP BJT NPN 350V 0.5A 3Pin TO-92
Motorola
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA
Micro Commercial Components
High Voltage Transistor 625mW
Diodes
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, 3 PIN
Continental Device
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.5A Ic, 20 - hFEl
Vishay Semiconductor
Bipolar Transistors - BJT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
