| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 250 V |
| Current Rating | 500 mA |
| Case/Package | TO-225-3 |
| Polarity | NPN |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 25 |
| hFE Max | 250 |
| Input Power (Max) | 20 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Size-Length | 7.74 mm |
| Size-Width | 2.66 mm |
| Size-Height | 11.04 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 500 |
Plastic NPN Silicon High-Voltage Power Transistor
●0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS
●. . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
●•Excellent DC Current Gain –
● hFE= 30–250 @ IC= 100 mAdc
●•Current–Gain – Bandwidth Product –
● fT= 10 MHz (Min) @ IC= 50 mAdc
ON Semiconductor
5 Pages / 0.12 MByte
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2 Pages / 0.03 MByte
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