TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 4 MHz |
Number of Pins | 2 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | 25.0 A |
Case/Package | TO-204-2 |
Number of Positions | 2 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 200 W |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 25A |
hFE Min | 20 |
hFE Max | 100 |
Input Power (Max) | 200 W |
DC Current Gain (hFE) | 4 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 200000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Size-Length | 39.37 mm |
Size-Width | 26.67 mm |
Size-Height | 8.51 mm |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
The 2N5883G is a 25A PNP high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
● Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
● Low leakage current (1mA DC maximum ICEX @ rated voltage)
● Excellent DC current gain (20 minimum hFE @ 10A DC IC)
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