| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-247-2 |
| Forward Voltage | 2.1 V |
| Thermal Resistance | 1.2℃/W (RθJC) |
| Reverse recovery time | 45 ns |
| Forward Current | 30000 mA |
| Max Forward Surge Current (Ifsm) | 325 A |
| Maximum Forward Voltage (Max) | 2.1 V |
| Forward Current (Max) | 30 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 15.8 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.8 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The RHRG3060 is a hyper-fast Ultra-fast Diode with soft-recovery characteristics. It has the half recovery time and is silicon nitride passivated ion-implanted epitaxial planar construction. It is intended to be used as free-wheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyper-fast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
● Avalanche energy rated
ON Semiconductor
6 Pages / 1.58 MByte
ON Semiconductor
18 Pages / 3.05 MByte
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