| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | -4.00 A |
| Case/Package | TO-126-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 40 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 750 @2A, 3V |
| Input Power (Max) | 40 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 40000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Width | 2.7 mm |
| Operating Temperature | 150℃ (TJ) |
Compared to other transistors, the PNP 2N6036 Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@4mA@4A V. This product"s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V|500@500mA@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
ST Microelectronics
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