| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -80.0 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220-3 |
| Polarity | PNP |
| Power Dissipation | 75 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 15A |
| hFE Min | 20 @5A, 4V |
| hFE Max | 150 |
| Input Power (Max) | 1.8 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 9.28 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
The 15 A, 80 V PNP Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. 2N6487, 2N6488 (NPN); and 2N6490, 2N6491 (PNP) are complementary devices.
●Features
●---
● |
● DC Current Gain Specified to 15 Amperes-- hFE = 20-150 @ IC = 5.0 Adc; hFE= 5.0 (Min) @ IC = 15 Adc
● Collector-Emitter Sustaining Voltage--VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490; VCEO(sus)= 80 Vdc (Min) - 2N6488, 2N6491
● High Current Gain--Bandwidth Product
●fT = 5.0 MHz (Min) @ IC = 1.0 Adc
● TO-220AB Compact Package
● Pb-Free Packages are Available
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
10 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
7 Pages / 0.09 MByte
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