| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-205 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Power Dissipation | 25 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 75 ns |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The 2N6796 is an N-channel Hi-Rel MOSFET Power Transistor features an efficient geometry and unique processing of this latest state of the art design achieves very low on-state resistance combined with high transconductance. This IRFF130 HEXFET technology MOSFET features voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
● Repetitive avalanche ratings
● Dynamic dv/dt rating
● Hermetically sealed
● Simple drive requirements
● Ease of paralleling
Infineon
7 Pages / 0.19 MByte
Infineon
1 Pages / 0.1 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
