| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.031 Ω |
| Polarity | P-Channel |
| Power Dissipation | 480 mW |
| Threshold Voltage | 650 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 2.9A |
| Rise Time | 208 ns |
| Input Capacitance (Ciss) | 1651pF @15V(Vds) |
| Fall Time | 552 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 480mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this NTR3A30PZT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 480 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.11 MByte
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7 Pages / 0.08 MByte
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5 Pages / 0.31 MByte
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