| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 20 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Input Capacitance (Ciss) | 380pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The 2N6845 is a P-channel enhancement-mode Power MOSFET offers ±20V gate-source voltage and -4A continuous drain current.
● High voltage
● Hermetically sealed metal package
● Simple drive requirements
● Light weight
● -55 to 150°C Operating temperature range
Semelab
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