TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 200 mA |
Case/Package | SOT-23-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.8 Ω |
Polarity | N-Channel |
Power Dissipation | 360 mW |
Threshold Voltage | 2.1 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±18.0 V |
Continuous Drain Current (Ids) | 200 mA |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 43pF @25V(Vds) |
Fall Time | 8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350mW (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Cut Tape (CT) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N7002 is a STripFET™ N-channel Power MOSFET designed as unique single feature size strip-based process. It shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps.
● Low Qg
● Low threshold drive
● -55 to 150°C Operating junction temperature range
ST Microelectronics
14 Pages / 0.61 MByte
ST Microelectronics
14 Pages / 0.34 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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