| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 115 mA |
| Case/Package | SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 7.50 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370mW (Ta) |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 115 mA |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 50pF @25V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 5.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Qualified to AEC-Q101 Standards for High Reliability
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