TYPE | DESCRIPTION |
---|
Number of Pins | 3 Pin |
Case/Package | SOT-883 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1 Ω |
Polarity | N-Channel |
Power Dissipation | 715 mW |
Threshold Voltage | 1.6 V |
Drain to Source Voltage (Vds) | 60 V |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 360mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ |
The 2N7002BKMB is a N-channel enhancement-mode MOSFET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
● Very fast switching
● Logic-level compatible
● Ultra thin package profile with 0.37mm height
● ESD protection up to 2kV
● -55 to 150°C Junction temperature range
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Panjit
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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