| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 295 mW |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 33pF @10V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.445 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The 2N7002BKS is a dual N-channel enhancement-mode MOSFET designed in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
● Logic-level compatible
● Very fast switching
● ESD protection up to 2kV
● AEC-Q101 qualified
Fairchild
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MOSFET Transistor, N Channel, 115mA, 60V, 1.2Ω, 10V, 2.1V
ST Microelectronics
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NXP
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NTE Electronics
Trans MOSFET N-CH 60V 0.115A 3Pin SOT-23 T/R
Diotec Semiconductor
Small Signal Field-Effect Transistor,
Panjit
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Infineon
OptiMOS⢠Small-Signal-Transistor
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