| TYPE | DESCRIPTION |
|---|
| Number of Pins | 2 Pin |
| Case/Package | TO-204 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Power Dissipation | 125 W |
| Rise Time | 85 ns |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF9140 is a -100V single P-channel HEXFET® MOSFET features efficient geometry and unique processing of this latest state-of-the-art design achieves, very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
● Repetitive avalanche ratings
● Dynamic dV/dt rating
● Hermetically sealed
● Simple drive requirements
Infineon
7 Pages / 0.14 MByte
Infineon
7 Pages / 0.14 MByte
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