| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 350 mW |
| Threshold Voltage | 1.75 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 0.3A |
| Input Capacitance (Ciss) | 47.2pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.35 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
The 2N7002CK is a N-channel enhancement-mode MOSFET designed in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
● Logic-level compatible
● Very fast switching
● ESD protection up to 2kV
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NXP
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NTE Electronics
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Panjit
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Infineon
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