| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 7.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 0.35 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 115 mA |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 30pF @25V(Vds) |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 150℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 3000 |
N-Channel 60-V (D-S) MOSFET Features N-Channel 60-V (D-S) MOSFET Low On-Resistance: 2 Ω Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET® Power MOSFET 2000 V ESD Protection
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