TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 7.5 Ω |
Power Dissipation | 1 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 60 V |
Input Capacitance (Ciss) | 50pF @25V(Vds) |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bag |
Material | Silicon |
Size-Length | 5.08 mm |
Size-Width | 0.16 in |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This 2N7008-G power MOSFET from Microchip Technology can be used for amplification in your circuit. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
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