TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 60.0 V |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 200 ℃ |
The 2N930A is a 45V NPN silicon "Industry Standard" Transistor designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies.
● 60V Collector to base voltage (VCBO)
● 6V Emitter to base voltage (VEBO)
Multicomp
1 Pages / 0.31 MByte
Microsemi
Trans GP BJT NPN 45V 0.03A 3Pin TO-18
Boca Semiconductor
Trans GP BJT NPN 45V 0.03A 3Pin TO-18
Multicomp
MULTICOMP 2N930A Bipolar (BJT) Single Transistor, NPN, 45V, 45MHz, 0.5W(1/2W), 30mA, 60 hFE
Microsemi
Trans GP BJT NPN 45V 0.03A 3Pin TO-18
Boca Semiconductor
Trans GP BJT NPN 45V 0.03A 3Pin TO-18
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