TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -50.0 V |
Current Rating | -2.00 A |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 1.5 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 2A |
hFE Min | 70 @500mA, 2V |
Input Power (Max) | 900 mW |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 900 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5.21 mm |
Size-Width | 4.19 mm |
Size-Height | 7.87 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92 (TO-226)
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