| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-226-3 |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 70 @500mA, 2V |
| Input Power (Max) | 900 mW |
| Power Dissipation (Max) | 900 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92MOD
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