| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 40 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 130 W |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| hFE Min | 50 @5A, 4V |
| Input Power (Max) | 130 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
The 2SA1386 is a -160V Silicon PNP Epitaxial Planar Transistor designed for audio and general purpose. Sanken LAPT transistor has an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. This PNP power transistor achieve faster power-up by decreasing thermal resistance and provide a higher avalanche breakdown voltage rating. This series of transistors is very well suited not only for multichannel applications for AV (audio-visual) amplifiers and receivers, but also for parallel connection applications for PA (professional audio system) amplifiers.
● Complement to type 2SC3519/A
Sanken Electric
1 Pages / 0.02 MByte
Sanken Electric
1 Pages / 0.59 MByte
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