| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 120 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Polarity | PNP |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| hFE Min | 200 @100mA, 5V |
| Input Power (Max) | 1.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 1500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
Features
●• High breakdown voltage
●• Large current capacity
●• Adoption of FBET and MBIT process
●• The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902
●Applications
●• Color TV audio output, converters, inverters
ON Semiconductor
7 Pages / 0.34 MByte
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Sanyo Semiconductor
PNP Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications
ON Semiconductor
Trans GP BJT PNP 160V 1.5A 3Pin TO-126ML
ON Semiconductor
Trans GP BJT PNP 160V 1.5A 3Pin TO-126ML
Sanyo Semiconductor
TRANS PNP 160V 1.5A TO-126
UTC
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Sanyo Semiconductor
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN
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