| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 130 W |
| Breakdown Voltage (Collector to Emitter) | 250 V |
| hFE Min | 80 @1A, 5V |
| Input Power (Max) | 130 W |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -50 ℃ |
| Power Dissipation (Max) | 130000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
2SA1962
●Features
●---
● |
● High Current Capability: IC = -15A
● High Power Dissipation : 130watts
● High Fequency : 30MHz
● High Voltage : VCEO= -250V
● Wide S.O.A for reliable operation
● Excellent Gain Linearity for low THD
● Complement to 2SC5242/FJA4313
● Thermal and electrical Spice models are available
● High-Fidelity Audio Output Amplifier
● General Purpose Power Amplifier
ON Semiconductor
6 Pages / 0.46 MByte
ON Semiconductor
13 Pages / 0.57 MByte
ON Semiconductor
4 Pages / 0.62 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
PNP Epitaxial Silicon Transistor
Fairchild
Trans GP BJT PNP 250V 17A 130000mW 3Pin(3+Tab) TO-3P Rail
ON Semiconductor
Trans GP BJT PNP 250V 17A 3Pin(3+Tab) TO-3P Tube
ON Semiconductor
Trans GP BJT PNP 250V 17A 3Pin(3+Tab) TO-3P Tube
Fairchild
Trans GP BJT PNP 250V 17A 130000mW 3Pin(3+Tab) TO-3P Rail
Toshiba
Power Amplifier Applications
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
