| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-226-3 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 120 @150mA, 10V |
| Input Power (Max) | 625 mW |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Cut Tape (CT) |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 50V 500mA 200MHz 625mW Through Hole TO-92B-B1
Panasonic
5 Pages / 0.51 MByte
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