| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-226-3 |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 70 @50mA, 2V |
| Input Power (Max) | 800 mW |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 80V 400mA 100MHz 800mW Through Hole TO-92MOD
Toshiba
4 Pages / 0.12 MByte
Toshiba
TRANS NPN 400mA 80V TO226-3
Toshiba
Trans Npn 400mA 80V To226-3
Toshiba
Trans Npn 400mA 80V To226-3
Transys Electronics
Plastic-Encapsulated Transistors
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